All MOSFET. MSP02N10 Datasheet

 

MSP02N10 Datasheet and Replacement


   Type Designator: MSP02N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.3 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TSOP-6
 

 MSP02N10 substitution

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MSP02N10 Datasheet (PDF)

 ..1. Size:1270K  bruckewell
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MSP02N10

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ N-Channel 100-V (D-S) MOSFET MSP02N10 Key Features: TSOP-6 schematic diagram Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters

Datasheet: MSK4N80F , MSK4N80T , MSK7D5N60F , MSK7D5N60T , MSK7N80F , MSK7N80T , MSK9N50F , MSK9N50T , IRLB4132 , MSP2301N3 , MSQ27N30 , MSQ2N60 , MSQ4N60 , MSQ5N50 , MSQ6N30 , MSQ6N40 , MSQ7434N .

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