MSP02N10 Datasheet. Specs and Replacement

Type Designator: MSP02N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.3 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TSOP-6

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MSP02N10 datasheet

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MSP02N10

Bruckewell Technology Corp., Ltd. http //www.bruckewell-semicon.com/ N-Channel 100-V (D-S) MOSFET MSP02N10 Key Features TSOP-6 schematic diagram Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters ... See More ⇒

Detailed specifications: MSK4N80F, MSK4N80T, MSK7D5N60F, MSK7D5N60T, MSK7N80F, MSK7N80T, MSK9N50F, MSK9N50T, CS150N03A8, MSP2301N3, MSQ27N30, MSQ2N60, MSQ4N60, MSQ5N50, MSQ6N30, MSQ6N40, MSQ7434N

Keywords - MSP02N10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.