MSQ27N30 Datasheet. Specs and Replacement

Type Designator: MSQ27N30  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: SOIC-8

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MSQ27N30 datasheet

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MSQ27N30

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. SOIC-8 Package MSQ27N30 Dual N-Channel 30-V (D-S) MOSFET Key Features Low RDS(on) provides higher efficiency and Extends battery life Low thermal impedance copper lead frame SOIC-8PP saves board space Fast switching speed High performance trench technology Typical Applications DC-DC co... See More ⇒

Detailed specifications: MSK7D5N60F, MSK7D5N60T, MSK7N80F, MSK7N80T, MSK9N50F, MSK9N50T, MSP02N10, MSP2301N3, AON7506, MSQ2N60, MSQ4N60, MSQ5N50, MSQ6N30, MSQ6N40, MSQ7434N, MSQ94P33, MSQ99N26

Keywords - MSQ27N30 MOSFET specs

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