All MOSFET. MSQ27N30 Datasheet

 

MSQ27N30 Datasheet and Replacement


   Type Designator: MSQ27N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: SOIC-8
 

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MSQ27N30 Datasheet (PDF)

 ..1. Size:614K  bruckewell
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MSQ27N30

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. SOIC-8 Package MSQ27N30 Dual N-Channel 30-V (D-S) MOSFET Key Features: Low RDS(on) provides higher efficiency and Extends battery life Low thermal impedance copper lead frame SOIC-8PP saves board space Fast switching speed High performance trench technology Typical Applications: DC-DC co

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