All MOSFET. MSQ5N50 Datasheet

 

MSQ5N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSQ5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: QFN5X6

 MSQ5N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSQ5N50 Datasheet (PDF)

 ..1. Size:419K  bruckewell
 msq5n50.pdf

MSQ5N50 MSQ5N50

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ Product Specification PRELIMINARY N-Channel Enhancement Mode Power MOSFET MSQ5N50 Description The MSQ5N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which

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History: SRT15N050HS2

 

 
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