MSQ6N30 MOSFET Datasheet: N-Ch, 30V, 6.4A. Full specification with pinout and replacement list

MSQ6N30 Specs and Replacement

Type Designator: MSQ6N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 65 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: SO-8

MSQ6N30 substitution

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MSQ6N30 datasheet

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Bruckewell Technology Corp., Ltd. MSQ6N30 Dual N-Channel 30-V (D-S) MOSFET Key Features Low RDS(on) trench technology SO-8 Package Low thermal impedance Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Notes a. Surface Mounted on 1 x 1 FR4 Board. b. Pulse width limi... See More ⇒

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Bruckewell Technology Corp., Ltd. http //www.bruckewell-semi.com Product Specification N-Channel Enhancement Mode Power MOSFET MSF6N40 Description The MSF6N40 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally prefer... See More ⇒

Detailed specifications: MSK9N50F , MSK9N50T , MSP02N10 , MSP2301N3 , MSQ27N30 , MSQ2N60 , MSQ4N60 , MSQ5N50 , AO4407 , MSQ6N40 , MSQ7434N , MSQ94P33 , MSQ99N26 , MSS34N40 , MSS5P05D , MSS5P05U , MSU11N50Q .