All MOSFET. MSQ6N40 Datasheet

 

MSQ6N40 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSQ6N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: QFN5X6

 MSQ6N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSQ6N40 Datasheet (PDF)

 ..1. Size:1601K  bruckewell
 msq6n40.pdf

MSQ6N40 MSQ6N40

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semi.com Product Specification N-Channel Enhancement Mode Power MOSFET MSF6N40 Description The MSF6N40 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally prefer

 9.1. Size:947K  bruckewell
 msq6n30.pdf

MSQ6N40 MSQ6N40

Bruckewell Technology Corp., Ltd. MSQ6N30 Dual N-Channel 30-V (D-S) MOSFET Key Features: Low RDS(on) trench technology SO-8 Package Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Notes a. Surface Mounted on 1 x 1 FR4 Board. b. Pulse width limi

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