MSQ6N40 Datasheet. Specs and Replacement

Type Designator: MSQ6N40  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: QFN5X6

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MSQ6N40 datasheet

 ..1. Size:1601K  bruckewell
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MSQ6N40

Bruckewell Technology Corp., Ltd. http //www.bruckewell-semi.com Product Specification N-Channel Enhancement Mode Power MOSFET MSF6N40 Description The MSF6N40 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally prefer... See More ⇒

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MSQ6N40

Bruckewell Technology Corp., Ltd. MSQ6N30 Dual N-Channel 30-V (D-S) MOSFET Key Features Low RDS(on) trench technology SO-8 Package Low thermal impedance Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Notes a. Surface Mounted on 1 x 1 FR4 Board. b. Pulse width limi... See More ⇒

Detailed specifications: MSK9N50T, MSP02N10, MSP2301N3, MSQ27N30, MSQ2N60, MSQ4N60, MSQ5N50, MSQ6N30, BS170, MSQ7434N, MSQ94P33, MSQ99N26, MSS34N40, MSS5P05D, MSS5P05U, MSU11N50Q, MSU12N60F

Keywords - MSQ6N40 MOSFET specs

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