All MOSFET. MSQ99N26 Datasheet

 

MSQ99N26 Datasheet and Replacement


   Type Designator: MSQ99N26
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOIC-8
 

 MSQ99N26 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MSQ99N26 Datasheet (PDF)

 ..1. Size:849K  bruckewell
 msq99n26.pdf pdf_icon

MSQ99N26

Bruckewell Technology Corp., Ltd. MSQ99N26 Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure SOIC-8minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCM

Datasheet: MSQ27N30 , MSQ2N60 , MSQ4N60 , MSQ5N50 , MSQ6N30 , MSQ6N40 , MSQ7434N , MSQ94P33 , RFP50N06 , MSS34N40 , MSS5P05D , MSS5P05U , MSU11N50Q , MSU12N60F , MSU12N60T , MSU18N40 , MSU1N60T .

History: STB18NF25 | JCS7N65RE | TSF4N90M | R6524KNX1

Keywords - MSQ99N26 MOSFET datasheet

 MSQ99N26 cross reference
 MSQ99N26 equivalent finder
 MSQ99N26 lookup
 MSQ99N26 substitution
 MSQ99N26 replacement

 

 
Back to Top

 


 
.