MSQ99N26 Datasheet. Specs and Replacement

Type Designator: MSQ99N26  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOIC-8

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MSQ99N26 datasheet

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MSQ99N26

Bruckewell Technology Corp., Ltd. MSQ99N26 Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure SOIC-8 minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCM... See More ⇒

Detailed specifications: MSQ27N30, MSQ2N60, MSQ4N60, MSQ5N50, MSQ6N30, MSQ6N40, MSQ7434N, MSQ94P33, IRF1407, MSS34N40, MSS5P05D, MSS5P05U, MSU11N50Q, MSU12N60F, MSU12N60T, MSU18N40, MSU1N60T

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