All MOSFET. MSQ99N26 Datasheet

 

MSQ99N26 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSQ99N26
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.4 nC
   trⓘ - Rise Time: 40 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOIC-8

 MSQ99N26 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSQ99N26 Datasheet (PDF)

 ..1. Size:849K  bruckewell
 msq99n26.pdf

MSQ99N26 MSQ99N26

Bruckewell Technology Corp., Ltd. MSQ99N26 Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure SOIC-8minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCM

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