All MOSFET. MSS5P05D Datasheet

 

MSS5P05D Datasheet and Replacement


   Type Designator: MSS5P05D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17.5 nC
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-252
 

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MSS5P05D Datasheet (PDF)

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MSS5P05D

50V/5.3A P-Channel Power MOSFET MSS5P05D / MSS5P05U 50V/5.3A P-Channel Power MOSFET General Description Low on resistance Improved inductive ruggedness DPAK Fast switching time (TO-252) Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliabillty IPAK Features (TO-251

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History: WMN18N70EM

Keywords - MSS5P05D MOSFET datasheet

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