MSS5P05D Datasheet and Replacement
Type Designator: MSS5P05D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 17.5 nC
tr ⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 123 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-252
MSS5P05D substitution
MSS5P05D Datasheet (PDF)
mss5p05d mss5p05u.pdf

50V/5.3A P-Channel Power MOSFET MSS5P05D / MSS5P05U 50V/5.3A P-Channel Power MOSFET General Description Low on resistance Improved inductive ruggedness DPAK Fast switching time (TO-252) Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliabillty IPAK Features (TO-251
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMN18N70EM
Keywords - MSS5P05D MOSFET datasheet
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History: WMN18N70EM



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