MSS5P05D Datasheet. Specs and Replacement

Type Designator: MSS5P05D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-252

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MSS5P05D datasheet

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MSS5P05D

50V/5.3A P-Channel Power MOSFET MSS5P05D / MSS5P05U 50V/5.3A P-Channel Power MOSFET General Description Low on resistance Improved inductive ruggedness DPAK Fast switching time (TO-252) Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliabillty IPAK Features (TO-251... See More ⇒

Detailed specifications: MSQ4N60, MSQ5N50, MSQ6N30, MSQ6N40, MSQ7434N, MSQ94P33, MSQ99N26, MSS34N40, 10N65, MSS5P05U, MSU11N50Q, MSU12N60F, MSU12N60T, MSU18N40, MSU1N60T, MSU1N60F, MSU1N60D

Keywords - MSS5P05D MOSFET specs

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