MSU1N60T Datasheet. Specs and Replacement

Type Designator: MSU1N60T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm

Package: TO-220

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MSU1N60T datasheet

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MSU1N60T

600V/1.2A POWER MOSFET (N-Channel) MSU1N60 600V/1.2A Power MOSFET (N-Channel) General Description MSU1N60 is a N-Channel enhancement mode power MOSFET SOT-223 TO-92 with advanced technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche an... See More ⇒

Detailed specifications: MSQ99N26, MSS34N40, MSS5P05D, MSS5P05U, MSU11N50Q, MSU12N60F, MSU12N60T, MSU18N40, 20N50, MSU1N60F, MSU1N60D, MSU1N60U, MSU2N60T, MSU2N60F, MSU2N60D, MSU2N60U, MSU2N60S

Keywords - MSU1N60T MOSFET specs

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