IRFS642 Datasheet and Replacement
Type Designator: IRFS642
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: TO220F
IRFS642 substitution
IRFS642 Datasheet (PDF)
irf640b irfs640b.pdf

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
Datasheet: IRFS630 , IRFS630A , IRFS632 , IRFS634 , IRFS634A , IRFS635 , IRFS640 , IRFS640A , P60NF06 , IRFS644 , IRFS644A , IRFS645 , IRFS650A , IRFS654A , IRFS710A , IRFS720 , IRFS720A .
History: VBZE45N03 | LN100 | TPHR8504PL | TPC65R600C | 2SK2938L | MTNK5S3 | 2SK1081-01
Keywords - IRFS642 MOSFET datasheet
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History: VBZE45N03 | LN100 | TPHR8504PL | TPC65R600C | 2SK2938L | MTNK5S3 | 2SK1081-01



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