IRFS642
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRFS642
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 12
A
Tj ⓘ - Максимальная температура канала: 150
°C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.22
Ohm
Тип корпуса:
TO220F
Аналог (замена) для IRFS642
-
подбор ⓘ MOSFET транзистора по параметрам
IRFS642
Datasheet (PDF)
8.4. Size:916K fairchild semi
irf640b irfs640b.pdf 
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
8.5. Size:898K fairchild semi
irfs644b.pdf 
November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to
8.6. Size:900K fairchild semi
irf644b irfs644b.pdf 
November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to
8.7. Size:922K fairchild semi
irfs640b.pdf 
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
8.8. Size:504K samsung
irfs644a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
8.9. Size:508K samsung
irfs640a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ. )1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
Другие MOSFET... IRFS630
, IRFS630A
, IRFS632
, IRFS634
, IRFS634A
, IRFS635
, IRFS640
, IRFS640A
, P60NF06
, IRFS644
, IRFS644A
, IRFS645
, IRFS650A
, IRFS654A
, IRFS710A
, IRFS720
, IRFS720A
.
History: AP80SL650AI
| 2SK3604-01S
