All MOSFET. MSU1N60D Datasheet

 

MSU1N60D MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSU1N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: TO-252

 MSU1N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSU1N60D Datasheet (PDF)

 7.1. Size:809K  taitron
 msu1n60.pdf

MSU1N60D MSU1N60D

600V/1.2A POWER MOSFET (N-Channel) MSU1N60 600V/1.2A Power MOSFET (N-Channel) General Description MSU1N60 is a N-Channel enhancement mode power MOSFET SOT-223 TO-92 with advanced technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche an

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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