All MOSFET. MSU1N60D Datasheet

 

MSU1N60D Datasheet and Replacement


   Type Designator: MSU1N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: TO-252
 

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MSU1N60D Datasheet (PDF)

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MSU1N60D

600V/1.2A POWER MOSFET (N-Channel) MSU1N60 600V/1.2A Power MOSFET (N-Channel) General Description MSU1N60 is a N-Channel enhancement mode power MOSFET SOT-223 TO-92 with advanced technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche an

Datasheet: MSS5P05D , MSS5P05U , MSU11N50Q , MSU12N60F , MSU12N60T , MSU18N40 , MSU1N60T , MSU1N60F , IRFB31N20D , MSU1N60U , MSU2N60T , MSU2N60F , MSU2N60D , MSU2N60U , MSU2N60S , MSU2N70 , MSU4D5N50Q .

History: NCEP85T14

Keywords - MSU1N60D MOSFET datasheet

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