All MOSFET. MSU4D5N50Q Datasheet

 

MSU4D5N50Q Datasheet and Replacement


   Type Designator: MSU4D5N50Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-262
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MSU4D5N50Q Datasheet (PDF)

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MSU4D5N50Q

500V/4.5A MOSFET (N-Channel) MSU4D5N50Q 500V/4.5A MOSFET (N-Channel) General Description The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. TO-262 Features RDS(ON) 1.5@VGS=10V Single Pul

Datasheet: MSU1N60D , MSU1N60U , MSU2N60T , MSU2N60F , MSU2N60D , MSU2N60U , MSU2N60S , MSU2N70 , EMB04N03H , MSU4N40 , MSU4N60 , MSU4N60S , MSU4N65 , MSU5N50 , MSU5N60T , MSU5N60F , MSU5N60D .

History: IRFPF40PBF | JCS5N50VT | SVS7N70FD2 | NTP30N06 | AP10N4R5S | AOB12T60P | FML12N60ES

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