MSU5N60T Datasheet. Specs and Replacement

Type Designator: MSU5N60T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220

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MSU5N60T datasheet

 7.1. Size:475K  taitron
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MSU5N60T

600V/4.5A POWER MOSFET (N-Channel) MSU5N60 600V/4.5A Power MOSFET (N-Channel) General Description MSU5N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati... See More ⇒

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MSU5N60T

MSU5N50 500V N-Channel MOSFET Description The MSU5N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design Rugged Gate Oxide... See More ⇒

Detailed specifications: MSU2N60S, MSU2N70, MSU4D5N50Q, MSU4N40, MSU4N60, MSU4N60S, MSU4N65, MSU5N50, IRF830, MSU5N60F, MSU5N60D, MSU7N60F, MSU7N60T, MSU8N50Q, MSU9N90P, MSW10N80, MSW11N90

Keywords - MSU5N60T MOSFET specs

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