All MOSFET. MSU7N60T Datasheet

 

MSU7N60T Datasheet and Replacement


   Type Designator: MSU7N60T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220
 

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MSU7N60T Datasheet (PDF)

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MSU7N60T

600V/7.4A POWER MOSFET (N-Channel) MSU7N60 600V/7.4A Power MOSFET (N-Channel) General Description MSU7N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

Datasheet: MSU4N60 , MSU4N60S , MSU4N65 , MSU5N50 , MSU5N60T , MSU5N60F , MSU5N60D , MSU7N60F , EMB04N03H , MSU8N50Q , MSU9N90P , MSW10N80 , MSW11N90 , MSW16N50 , MSW20N50 , MSW20N60 , MSW9N90 .

Keywords - MSU7N60T MOSFET datasheet

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