MSU7N60T Datasheet. Specs and Replacement

Type Designator: MSU7N60T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220

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MSU7N60T datasheet

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MSU7N60T

600V/7.4A POWER MOSFET (N-Channel) MSU7N60 600V/7.4A Power MOSFET (N-Channel) General Description MSU7N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati... See More ⇒

Detailed specifications: MSU4N60, MSU4N60S, MSU4N65, MSU5N50, MSU5N60T, MSU5N60F, MSU5N60D, MSU7N60F, AON7403, MSU8N50Q, MSU9N90P, MSW10N80, MSW11N90, MSW16N50, MSW20N50, MSW20N60, MSW9N90

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