MSU8N50Q Datasheet. Specs and Replacement

Type Designator: MSU8N50Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 134 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-262

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MSU8N50Q datasheet

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MSU8N50Q

500V/8A POWER MOSFET (N-Channel) MSU8N50Q 500V/8A Power MOSFET (N-Channel) General Description MSU8N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commutati... See More ⇒

Detailed specifications: MSU4N60S, MSU4N65, MSU5N50, MSU5N60T, MSU5N60F, MSU5N60D, MSU7N60F, MSU7N60T, K2611, MSU9N90P, MSW10N80, MSW11N90, MSW16N50, MSW20N50, MSW20N60, MSW9N90, MTA090N02KC3

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