All MOSFET. MSU8N50Q Datasheet

 

MSU8N50Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSU8N50Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 134 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-262

 MSU8N50Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSU8N50Q Datasheet (PDF)

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 msu8n50q.pdf

MSU8N50Q MSU8N50Q

500V/8A POWER MOSFET (N-Channel) MSU8N50Q 500V/8A Power MOSFET (N-Channel) General Description MSU8N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commutati

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