All MOSFET. MSU8N50Q Datasheet

 

MSU8N50Q Datasheet and Replacement


   Type Designator: MSU8N50Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 134 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-262
 

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MSU8N50Q Datasheet (PDF)

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MSU8N50Q

500V/8A POWER MOSFET (N-Channel) MSU8N50Q 500V/8A Power MOSFET (N-Channel) General Description MSU8N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commutati

Datasheet: MSU4N60S , MSU4N65 , MSU5N50 , MSU5N60T , MSU5N60F , MSU5N60D , MSU7N60F , MSU7N60T , IRF9640 , MSU9N90P , MSW10N80 , MSW11N90 , MSW16N50 , MSW20N50 , MSW20N60 , MSW9N90 , MTA090N02KC3 .

History: IRLML0030PBF-1 | PDD6902 | JFAM30N50E | JFAM20N65C

Keywords - MSU8N50Q MOSFET datasheet

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