MSU9N90P Datasheet and Replacement
Type Designator: MSU9N90P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3P
MSU9N90P substitution
MSU9N90P Datasheet (PDF)
msu9n90p.pdf

900V/9A Power MOSFET (N-Channel) MSU9N90P 900V/9A Power MOSFET (N-Channel) General Description MSU9N90P is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance. This device is well suited for use as a load switch or in PWM applications.
Datasheet: MSU4N65 , MSU5N50 , MSU5N60T , MSU5N60F , MSU5N60D , MSU7N60F , MSU7N60T , MSU8N50Q , 2SK3918 , MSW10N80 , MSW11N90 , MSW16N50 , MSW20N50 , MSW20N60 , MSW9N90 , MTA090N02KC3 , MTA340N02KC3 .
History: FQPF10N60CF
Keywords - MSU9N90P MOSFET datasheet
MSU9N90P cross reference
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History: FQPF10N60CF



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