MSU9N90P Datasheet. Specs and Replacement

Type Designator: MSU9N90P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-3P

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MSU9N90P datasheet

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MSU9N90P

900V/9A Power MOSFET (N-Channel) MSU9N90P 900V/9A Power MOSFET (N-Channel) General Description MSU9N90P is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance. This device is well suited for use as a load switch or in PWM applications. ... See More ⇒

Detailed specifications: MSU4N65, MSU5N50, MSU5N60T, MSU5N60F, MSU5N60D, MSU7N60F, MSU7N60T, MSU8N50Q, EMB04N03H, MSW10N80, MSW11N90, MSW16N50, MSW20N50, MSW20N60, MSW9N90, MTA090N02KC3, MTA340N02KC3

Keywords - MSU9N90P MOSFET specs

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