MSW20N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: MSW20N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 490 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO-247
MSW20N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSW20N50 Datasheet (PDF)
msw20n50.pdf
MSW20N50 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness
msw20n60.pdf
Preliminary MSW20N60 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
