MSW9N90 Datasheet. Specs and Replacement

Type Designator: MSW9N90  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-3P TO-247

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MSW9N90 datasheet

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MSW9N90

Preliminary MSW9N90 900V N-Channel MOSFET Description TO-247 This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Max 1.4 )@VGS=10V Gate Charge (Typical 45nC) Improved dv/dt Capability, Hi... See More ⇒

Detailed specifications: MSU7N60T, MSU8N50Q, MSU9N90P, MSW10N80, MSW11N90, MSW16N50, MSW20N50, MSW20N60, IRFP064N, MTA090N02KC3, MTA340N02KC3, MTA55N20J3, MTB070P15J3, MTB080N15J3, MTB09P03E3, MTB09P04DJ3, MTB110P10L3

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