All MOSFET. MSW9N90 Datasheet

 

MSW9N90 Datasheet and Replacement


   Type Designator: MSW9N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-3P TO-247
 

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MSW9N90 Datasheet (PDF)

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MSW9N90

Preliminary MSW9N90 900V N-Channel MOSFET Description TO-247 This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Max 1.4 )@VGS=10V Gate Charge (Typical 45nC) Improved dv/dt Capability, Hi

Datasheet: MSU7N60T , MSU8N50Q , MSU9N90P , MSW10N80 , MSW11N90 , MSW16N50 , MSW20N50 , MSW20N60 , 5N50 , MTA090N02KC3 , MTA340N02KC3 , MTA55N20J3 , MTB070P15J3 , MTB080N15J3 , MTB09P03E3 , MTB09P04DJ3 , MTB110P10L3 .

History: IXFA36N20X3 | ME04N25G

Keywords - MSW9N90 MOSFET datasheet

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