All MOSFET. MTA090N02KC3 Datasheet

 

MTA090N02KC3 Datasheet and Replacement


   Type Designator: MTA090N02KC3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.6 nC
   tr ⓘ - Rise Time: 17.8 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-523
 

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MTA090N02KC3 Datasheet (PDF)

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MTA090N02KC3

Spec. No. : C983C3 CYStech Electronics Corp. Issued Date : 2014.11.19 Revised Date : Page No. : 1/8 20V N-Channel Enhancement Mode MOSFET MTA090N02KC3 BVDSS 20VID @VGS=4V, TA=25C 1.4A RDSON@VGS=4V, ID=1A 63m (typ) RDSON@VGS=2.5V,ID=1A 83m (typ) Features RDSON@VGS=1.8V,ID=500mA 160m (typ) Simple drive requirement Small package outline Pb-free lead

 8.1. Size:362K  cystek
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MTA090N02KC3

Spec. No. : C322J3 Issued Date : 2014.03.27 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -20VMTA090P02J3 ID @ VGS=-4.5V -10ARDS(ON)@VGS= -4.5V, ID= -6A 78m (typ)RDS(ON)@VGS= -2.5V, ID= -3A 120m (typ)Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free

Datasheet: MSU8N50Q , MSU9N90P , MSW10N80 , MSW11N90 , MSW16N50 , MSW20N50 , MSW20N60 , MSW9N90 , IRFP064N , MTA340N02KC3 , MTA55N20J3 , MTB070P15J3 , MTB080N15J3 , MTB09P03E3 , MTB09P04DJ3 , MTB110P10L3 , MTB160N25J3 .

History: FCPF850N80Z

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