MTA090N02KC3 Datasheet. Specs and Replacement

Type Designator: MTA090N02KC3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.8 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT-523

  📄📄 Copy 

MTA090N02KC3 substitution

- MOSFET ⓘ Cross-Reference Search

 

MTA090N02KC3 datasheet

 ..1. Size:367K  cystek
 mta090n02kc3.pdf pdf_icon

MTA090N02KC3

Spec. No. C983C3 CYStech Electronics Corp. Issued Date 2014.11.19 Revised Date Page No. 1/8 20V N-Channel Enhancement Mode MOSFET MTA090N02KC3 BVDSS 20V ID @VGS=4V, TA=25 C 1.4A RDSON@VGS=4V, ID=1A 63m (typ) RDSON@VGS=2.5V,ID=1A 83m (typ) Features RDSON@VGS=1.8V,ID=500mA 160m (typ) Simple drive requirement Small package outline Pb-free lead... See More ⇒

 8.1. Size:362K  cystek
 mta090p02j3.pdf pdf_icon

MTA090N02KC3

Spec. No. C322J3 Issued Date 2014.03.27 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -20V MTA090P02J3 ID @ VGS=-4.5V -10A RDS(ON)@VGS= -4.5V, ID= -6A 78m (typ) RDS(ON)@VGS= -2.5V, ID= -3A 120m (typ) Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free ... See More ⇒

Detailed specifications: MSU8N50Q, MSU9N90P, MSW10N80, MSW11N90, MSW16N50, MSW20N50, MSW20N60, MSW9N90, AO4468, MTA340N02KC3, MTA55N20J3, MTB070P15J3, MTB080N15J3, MTB09P03E3, MTB09P04DJ3, MTB110P10L3, MTB160N25J3

Keywords - MTA090N02KC3 MOSFET specs

 MTA090N02KC3 cross reference

 MTA090N02KC3 equivalent finder

 MTA090N02KC3 pdf lookup

 MTA090N02KC3 substitution

 MTA090N02KC3 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility