All MOSFET. MTA090N02KC3 Datasheet

 

MTA090N02KC3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTA090N02KC3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.6 nC
   trⓘ - Rise Time: 17.8 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-523

 MTA090N02KC3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTA090N02KC3 Datasheet (PDF)

 ..1. Size:367K  cystek
 mta090n02kc3.pdf

MTA090N02KC3 MTA090N02KC3

Spec. No. : C983C3 CYStech Electronics Corp. Issued Date : 2014.11.19 Revised Date : Page No. : 1/8 20V N-Channel Enhancement Mode MOSFET MTA090N02KC3 BVDSS 20VID @VGS=4V, TA=25C 1.4A RDSON@VGS=4V, ID=1A 63m (typ) RDSON@VGS=2.5V,ID=1A 83m (typ) Features RDSON@VGS=1.8V,ID=500mA 160m (typ) Simple drive requirement Small package outline Pb-free lead

 8.1. Size:362K  cystek
 mta090p02j3.pdf

MTA090N02KC3 MTA090N02KC3

Spec. No. : C322J3 Issued Date : 2014.03.27 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -20VMTA090P02J3 ID @ VGS=-4.5V -10ARDS(ON)@VGS= -4.5V, ID= -6A 78m (typ)RDS(ON)@VGS= -2.5V, ID= -3A 120m (typ)Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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