2SJ140 Datasheet. Specs and Replacement
Type Designator: 2SJ140 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220AB
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2SJ140 substitution
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2SJ140 datasheet
2sj148.pdf
2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs Low on resistance R = 1.3 (typ.) DS (ON) Enhancement-mode Complementary to 2SK9... See More ⇒
2sj144.pdf
2SJ144 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ144 Audio Frequency Amplifier Applications Unit mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage VGDS = 50 V (min) High input impedance I = 1.0 nA (max) (V = 30 V) GSS GS Low R R = 270 (typ.) (I = -5 mA) DS (ON)... See More ⇒
2sj146.pdf
Silicon MOS FETs (Small Signal) 2SJ146 2SJ146 Silicon P-Channel MOS Unit mm For switching +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching 1 Downsizing of sets by mini-type package and automatic insertion by taping/magazine packing are available. 3 2 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 0.1 to 0.3 Drai... See More ⇒
Detailed specifications: 2SJ132, 2SJ133, 2SJ134, 2SJ135, 2SJ136, 2SJ137, 2SJ138, 2SJ139, IRF640N, 2SJ141, 2SJ142, 2SJ143, 2SJ151, 2SJ152, 2SJ165, 2SJ166, 2SJ178
Keywords - 2SJ140 MOSFET specs
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