All MOSFET. MTB070P15J3 Datasheet

 

MTB070P15J3 Datasheet and Replacement


   Type Designator: MTB070P15J3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 23.4 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO-252
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MTB070P15J3 Datasheet (PDF)

 ..1. Size:369K  cystek
 mtb070p15j3.pdf pdf_icon

MTB070P15J3

Spec. No. : C985J3 Issued Date : 2015.01.21 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150VMTB070P15J3 ID@VGS=-10V, TC=25C -21A ID@VGS=-10V, TA=25C -3.7A RDS(ON)@VGS=-10V, ID=-5.2A 65m(typ) RDS(ON)@VGS=-4.5V, ID=-5A 69m(typ) Features Single Drive Requirement Low On-resistance Fast sw

 8.1. Size:312K  cystek
 mtb070n11j3.pdf pdf_icon

MTB070P15J3

Spec. No. : C932J3 Issued Date : 2013.10.30 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 110VMTB070N11J3 ID 15ARDS(ON)@VGS=10V, ID=15A 82 m(typ) RDS(ON)@VGS=4.5V, ID=10A 81 m(typ) Features Low on resistance Simple drive requirement Low gate charge Fast switching characteristic

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WNM12N65F | R6006JND3 | 1N70Z | AP30H80Q | BSC060P03NS3EG | PDP0959 | PTP20N70A

Keywords - MTB070P15J3 MOSFET datasheet

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