MTB110P10L3 Datasheet. Specs and Replacement

Type Designator: MTB110P10L3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.6 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: SOT-223

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MTB110P10L3 substitution

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MTB110P10L3 datasheet

 ..1. Size:345K  cystek
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MTB110P10L3

Spec. No. C968L3 Issued Date 2014.12.23 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10L3 ID@VGS=-10V, TA=25 C -3.8A ID@VGS=-10V, TC=25 C -10.8A 85m (typ.) RDSON@VGS=-10V, ID=-4.5A Features 96m (typ.) RDSON@VGS=-4.5V, ID=-4A Simple Drive Requirement Low On-resistance F... See More ⇒

 5.1. Size:595K  cystek
mtb110p10j3.pdf pdf_icon

MTB110P10L3

Spec. No. C968J3 Issued Date 2014.08.07 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTB110P10J3 ID -14A RDS(ON)@VGS=-10V, ID=-4.5A 79m (typ) RDS(ON)@VGS=-4.5V, ID=-4A 90m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package ... See More ⇒

 5.2. Size:525K  cystek
mtb110p10f3.pdf pdf_icon

MTB110P10L3

Spec. No. C968F3 Issued Date 2014.08.05 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10F3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80m RDSON(TYP) @ VGS=-4.5V, ID=-8A 93m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching ... See More ⇒

 5.3. Size:518K  cystek
mtb110p10e3.pdf pdf_icon

MTB110P10L3

Spec. No. C968E3 Issued Date 2014.08.04 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10E3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80m RDSON(TYP) @ VGS=-4.5V, ID=-8A 93m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching ... See More ⇒

Detailed specifications: MSW9N90, MTA090N02KC3, MTA340N02KC3, MTA55N20J3, MTB070P15J3, MTB080N15J3, MTB09P03E3, MTB09P04DJ3, IRF540N, MTB160N25J3, MTB20A06Q8, MTB20N04J3, MTB23P06VT4, MTB25C04Q8, MTB2D5N03BH8, MTB2P50ET4G, MTB300N10L3

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