MTB160N25J3 Datasheet and Replacement. Cross Reference Search

MTB160N25J3 Datasheet (PDF)

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Spec. No. : C977J3 Issued Date : 2014.10.02 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 250VMTB160N25J3 ID@VGS=10V 18AVGS=10V, ID=9A 132m RDSON(TYP) VGS=4.5V, ID=6A 138m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-252(DPAK

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB16N25E/DDesigner's Data SheetMTB16N25ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 16 AMPERES250 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.25 OHMthan any existing surface m

9.2. Size:334K cystek
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Spec. No. : C706J3 Issued Date : 2009.04.23 CYStech Electronics Corp.Revised Date : 2010.05.17 Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB16P04J3 ID -25A16m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB16P04J3 TO-252 GGate DDrain

Datasheet: MTA090N02KC3 , MTA340N02KC3 , MTA55N20J3 , MTB070P15J3 , MTB080N15J3 , MTB09P03E3 , MTB09P04DJ3 , MTB110P10L3 , IRF540N , MTB20A06Q8 , MTB20N04J3 , MTB23P06VT4 , MTB25C04Q8 , MTB2D5N03BH8 , MTB2P50ET4G , MTB300N10L3 , MTB30P06VT4 .