MTB2D5N03BH8 Datasheet. Specs and Replacement

Type Designator: MTB2D5N03BH8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.2 nS

Cossⓘ - Output Capacitance: 495 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: DFN5X6

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MTB2D5N03BH8 datasheet

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MTB2D5N03BH8

Spec. No. C998H8 Issued Date 2015.03.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB2D5N03BH8 BVDSS 30V ID@VGS=10V, TC=25 C 60A ID@VGS=10V, TA=25 C 20A Features RDS(ON)@VGS=10V, ID=30A 2.1 m (typ) Single Drive Requirement RDS(ON)@VGS=4.5V, ID=24A 2.9 m (typ) Low On-resistance Fast S... See More ⇒

Detailed specifications: MTB09P03E3, MTB09P04DJ3, MTB110P10L3, MTB160N25J3, MTB20A06Q8, MTB20N04J3, MTB23P06VT4, MTB25C04Q8, IRF1404, MTB2P50ET4G, MTB300N10L3, MTB30P06VT4, MTB30P06VT4G, MTB3D0N03BH8, MTB50P03HDLG, MTB50P03HDLT4, MTB50P03HDLT4G

Keywords - MTB2D5N03BH8 MOSFET specs

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