All MOSFET. MTB2P50ET4G Datasheet

 

MTB2P50ET4G Datasheet and Replacement


   Type Designator: MTB2P50ET4G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: D2PAK
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MTB2P50ET4G Datasheet (PDF)

 ..1. Size:85K  onsemi
 mtb2p50e-d mtb2p50et4g.pdf pdf_icon

MTB2P50ET4G

MTB2P50EPreferred DevicePower MOSFET2 Amps, 500 VoltsP-Channel D2PAKThis high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradinghttp://onsemi.comperformance over time. In addition, this Power MOSFET is designedto withstand high energy in the avalanche and commutation modes.2 AMPERES, 500 VOLTSThe energy effic

 6.1. Size:273K  motorola
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MTB2P50ET4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB2P50E/DDesigner's Data SheetMTB2P50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 2.0 AMPERES500 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 6.0 OHMthan any existing surface mou

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

Keywords - MTB2P50ET4G MOSFET datasheet

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