All MOSFET. MTB2P50ET4G Datasheet

 

MTB2P50ET4G Datasheet and Replacement


   Type Designator: MTB2P50ET4G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: D2PAK
 

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MTB2P50ET4G Datasheet (PDF)

 ..1. Size:85K  onsemi
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MTB2P50ET4G

MTB2P50EPreferred DevicePower MOSFET2 Amps, 500 VoltsP-Channel D2PAKThis high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradinghttp://onsemi.comperformance over time. In addition, this Power MOSFET is designedto withstand high energy in the avalanche and commutation modes.2 AMPERES, 500 VOLTSThe energy effic

 6.1. Size:273K  motorola
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MTB2P50ET4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB2P50E/DDesigner's Data SheetMTB2P50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 2.0 AMPERES500 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 6.0 OHMthan any existing surface mou

Datasheet: MTB09P04DJ3 , MTB110P10L3 , MTB160N25J3 , MTB20A06Q8 , MTB20N04J3 , MTB23P06VT4 , MTB25C04Q8 , MTB2D5N03BH8 , IRFP260N , MTB300N10L3 , MTB30P06VT4 , MTB30P06VT4G , MTB3D0N03BH8 , MTB50P03HDLG , MTB50P03HDLT4 , MTB50P03HDLT4G , MTB5D0P03J3 .

History: SWD13N65K2 | RU3710R | SRT08N025HC56TR-G | STH275N8F7-2AG | RD3H045SP | KIA7N60U | RU30L40M-C

Keywords - MTB2P50ET4G MOSFET datasheet

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