MTB2P50ET4G Datasheet. Specs and Replacement

Type Designator: MTB2P50ET4G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: D2PAK

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MTB2P50ET4G datasheet

 ..1. Size:85K  onsemi
 mtb2p50e-d mtb2p50et4g.pdf pdf_icon

MTB2P50ET4G

MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P-Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading http //onsemi.com performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. 2 AMPERES, 500 VOLTS The energy effic... See More ⇒

 6.1. Size:273K  motorola
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MTB2P50ET4G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB2P50E/D Designer's Data Sheet MTB2P50E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 2.0 AMPERES 500 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 6.0 OHM than any existing surface mou... See More ⇒

Detailed specifications: MTB09P04DJ3, MTB110P10L3, MTB160N25J3, MTB20A06Q8, MTB20N04J3, MTB23P06VT4, MTB25C04Q8, MTB2D5N03BH8, IRLZ44N, MTB300N10L3, MTB30P06VT4, MTB30P06VT4G, MTB3D0N03BH8, MTB50P03HDLG, MTB50P03HDLT4, MTB50P03HDLT4G, MTB5D0P03J3

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