All MOSFET. MTB3D0N03BH8 Datasheet

 

MTB3D0N03BH8 Datasheet and Replacement


   Type Designator: MTB3D0N03BH8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.2 nS
   Cossⓘ - Output Capacitance: 419 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN5X6
 

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MTB3D0N03BH8 Datasheet (PDF)

 ..1. Size:431K  cystek
 mtb3d0n03bh8.pdf pdf_icon

MTB3D0N03BH8

Spec. No. : C999H8 Issued Date : 2015.03.10 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB3D0N03BH8BVDSS 30VID@VGS=10V, TC=25C 60A ID@VGS=10V, TA=25C 19.2A Features RDS(ON)@VGS=10V, ID=30A 2.5 m(typ) Single Drive Requirement RDS(ON)@VGS=4.5V, ID=24A 3.5 m(typ) Low On-resistance Fast

 5.1. Size:427K  cystek
 mtb3d0n03ath8.pdf pdf_icon

MTB3D0N03BH8

Spec. No. : C943H8 Issued Date : 2014.03.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB3D0N03ATH8BVDSS 30VID 75ARDS(ON)@VGS=10V, ID=30A 2.9 m(typ)Features RDS(ON)@VGS=4.5V, ID=24A 4.0 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt r

Datasheet: MTB20N04J3 , MTB23P06VT4 , MTB25C04Q8 , MTB2D5N03BH8 , MTB2P50ET4G , MTB300N10L3 , MTB30P06VT4 , MTB30P06VT4G , IRF3710 , MTB50P03HDLG , MTB50P03HDLT4 , MTB50P03HDLT4G , MTB5D0P03J3 , MTB5D0P03Q8 , MTB60P15H8 , MTB6D0N03BH8 , MTB75N05HDT4 .

History: SFP052N80BI3 | IPA60R080P7 | IPA083N10NM5S

Keywords - MTB3D0N03BH8 MOSFET datasheet

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