MTBA6C12Q8
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTBA6C12Q8
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 16.2
nS
Cossⓘ -
Output Capacitance: 29
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23
Ohm
Package:
SOP-8
MTBA6C12Q8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTBA6C12Q8
Datasheet (PDF)
..1. Size:432K cystek
mtba6c12q8.pdf 
Spec. No. : C973Q8 Issued Date : 2014.09.23 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTBA6C12Q8 BVDSS 120V -120VID @ VGS=10V(-10V) 2A -1.7ARDSON(typ.) @VGS=(-)10V 178 m 246 m RDSON(typ.) @VGS=(-)4.5V 185 m 276 m Description The MTBA6C12Q8 consists of a N-channel and a P-channel enhanc
6.1. Size:397K cystek
mtba6c12j4.pdf
Spec. No. : C973J4 Issued Date : 2014.06.13 CYStech Electronics Corp. Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTBA6C12J4 BVDSS 120V -120VID @ VGS=10V(-10V) 2A -1.6ARDSON(typ.) @VGS=(-)10V 176 m 246 m RDSON(typ.) @VGS=(-)4.5V 183 m 276 m Features Low Gate Charge Simple Drive Requirement RoHS compliant
7.1. Size:431K cystek
mtba6c15q8.pdf
Spec. No. : C938Q8 Issued Date : 2014.12.01 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTBA6C15Q8 BVDSS 150V -150VID @ TA=25C, VGS=10V(-10V) 1.8A -1.5AID @ TA=70C, VGS=10V(-10V) 1.5A -1.3AID @ TC=25C, VGS=10V(-10V) 3.2A -2.6AID @ TC=100C, VGS=10V(-10V) 2.3A -1.8ARDSON(typ.) @VGS=(-)10V
7.2. Size:402K cystek
mtba6c15j4.pdf
Spec. No. : C938J4 Issued Date : 2014.10.15 CYStech Electronics Corp.Revised Date : 2014.10.28 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTBA6C15J4 BVDSS 150V -150VID @VGS=10V(-10V) 9.3A -7.1ARDSON(TYP)@VGS=10V(-10V) 167m 253m Features RDSON(TYP)@VGS=4.5V(-4.5V) 172m 273m Low gate charge Simple drive requirement Pb-f
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