All MOSFET. MTBA6C15J4 Datasheet

 

MTBA6C15J4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTBA6C15J4
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 37.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 9.3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 13.4 nC
   trⓘ - Rise Time: 16.2 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
   Package: TO-252-4L

 MTBA6C15J4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTBA6C15J4 Datasheet (PDF)

 ..1. Size:402K  cystek
 mtba6c15j4.pdf

MTBA6C15J4 MTBA6C15J4

Spec. No. : C938J4 Issued Date : 2014.10.15 CYStech Electronics Corp.Revised Date : 2014.10.28 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTBA6C15J4 BVDSS 150V -150VID @VGS=10V(-10V) 9.3A -7.1ARDSON(TYP)@VGS=10V(-10V) 167m 253m Features RDSON(TYP)@VGS=4.5V(-4.5V) 172m 273m Low gate charge Simple drive requirement Pb-f

 6.1. Size:431K  cystek
 mtba6c15q8.pdf

MTBA6C15J4 MTBA6C15J4

Spec. No. : C938Q8 Issued Date : 2014.12.01 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTBA6C15Q8 BVDSS 150V -150VID @ TA=25C, VGS=10V(-10V) 1.8A -1.5AID @ TA=70C, VGS=10V(-10V) 1.5A -1.3AID @ TC=25C, VGS=10V(-10V) 3.2A -2.6AID @ TC=100C, VGS=10V(-10V) 2.3A -1.8ARDSON(typ.) @VGS=(-)10V

 7.1. Size:397K  cystek
 mtba6c12j4.pdf

MTBA6C15J4 MTBA6C15J4

Spec. No. : C973J4 Issued Date : 2014.06.13 CYStech Electronics Corp. Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTBA6C12J4 BVDSS 120V -120VID @ VGS=10V(-10V) 2A -1.6ARDSON(typ.) @VGS=(-)10V 176 m 246 m RDSON(typ.) @VGS=(-)4.5V 183 m 276 m Features Low Gate Charge Simple Drive Requirement RoHS compliant

 7.2. Size:432K  cystek
 mtba6c12q8.pdf

MTBA6C15J4 MTBA6C15J4

Spec. No. : C973Q8 Issued Date : 2014.09.23 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTBA6C12Q8 BVDSS 120V -120VID @ VGS=10V(-10V) 2A -1.7ARDSON(typ.) @VGS=(-)10V 178 m 246 m RDSON(typ.) @VGS=(-)4.5V 185 m 276 m Description The MTBA6C12Q8 consists of a N-channel and a P-channel enhanc

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FQP7P06

 

 
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