All MOSFET. APQ05SN60AF Datasheet

 

APQ05SN60AF Datasheet and Replacement


   Type Designator: APQ05SN60AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-220F
 

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APQ05SN60AF Datasheet (PDF)

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APQ05SN60AF

DEVICE SPECIFICATION apQ05SN60A(F)600V/5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 5A RDS(on) = 1.5(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2.5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimiz

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