All MOSFET. APQ07SN80BH Datasheet

 

APQ07SN80BH Datasheet and Replacement


   Type Designator: APQ07SN80BH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 154 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23.2 nC
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO-220
 

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APQ07SN80BH Datasheet (PDF)

 ..1. Size:679K  alpha pacific
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APQ07SN80BH

DEVICE SPECIFICATION APQ07SN80BHAPQ07SN80BF 800V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 7A effect transistors are produced using planar stripe, RDS(on) =1.3(typ)VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

 7.1. Size:663K  alpha pacific
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APQ07SN80BH

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.)VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t

 7.2. Size:745K  alpha pacific
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APQ07SN80BH

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0(typ)VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

 7.3. Size:745K  alpha pacific
 apq07sn65af.pdf pdf_icon

APQ07SN80BH

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0(typ)VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

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Keywords - APQ07SN80BH MOSFET datasheet

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