All MOSFET. APQ07SN80BH Datasheet

 

APQ07SN80BH MOSFET. Datasheet pdf. Equivalent

Type Designator: APQ07SN80BH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 154 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 72 nS

Drain-Source Capacitance (Cd): 104 pF

Maximum Drain-Source On-State Resistance (Rds): 1.55 Ohm

Package: TO-220

APQ07SN80BH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APQ07SN80BH Datasheet (PDF)

1.1. apq07sn80bf apq07sn80bh.pdf Size:679K _upd-mosfet

APQ07SN80BH
APQ07SN80BH

DEVICE SPECIFICATION APQ07SN80BH APQ07SN80BF 800V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field • 800V / 7A effect transistors are produced using planar stripe, • RDS(on) =1.3Ω(typ),VGS =10V, ID =3.5A DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored to m

3.1. apq07sn65af.pdf Size:745K _upd-mosfet

APQ07SN80BH
APQ07SN80BH

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power  650V / 7A field effect transistors are produced using planar  RDS(on) = 1.0Ω (typ),VGS = 10 V ,ID =3.45A stripe, DMOS technology.  Fast switching This advanced technology has been especially  100% avalanche tested tailo

3.2. apq07sn60ah.pdf Size:663K _upd-mosfet

APQ07SN80BH
APQ07SN80BH

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field  600V / 7A effect transistors are produced using planar stripe,  RDS(on) =0.9Ω (typ.),VGS =10V, ID =3.5A DMOS technology.  Fast switching This advanced technology has been especially  100% avalanche tested tailored t

 3.3. apq07sn60af.pdf Size:663K _upd-mosfet

APQ07SN80BH
APQ07SN80BH

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field  600V / 7A effect transistors are produced using planar stripe,  RDS(on) =0.9Ω (typ.),VGS =10V, ID =3.5A DMOS technology.  Fast switching This advanced technology has been especially  100% avalanche tested tailored t

3.4. apq07sn65ah.pdf Size:745K _upd-mosfet

APQ07SN80BH
APQ07SN80BH

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power  650V / 7A field effect transistors are produced using planar  RDS(on) = 1.0Ω (typ),VGS = 10 V ,ID =3.45A stripe, DMOS technology.  Fast switching This advanced technology has been especially  100% avalanche tested tailo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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