APQ09SN50AF MOSFET Datasheet: N-Ch, 500V, 9A. Full specification with pinout and replacement list

APQ09SN50AF Specs and Replacement

Type Designator: APQ09SN50AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 135 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO-220F

APQ09SN50AF substitution

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APQ09SN50AF datasheet

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DEVICE SPECIFICATION apQ09SN50A(F) 500V/9A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 500V / 9A RDS(on) =0.6 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =5.4A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

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DEVICE SPECIFICATION APQ09SN90AD 900V/9A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 850V / 9A effect transistors are produced using planar stripe, RDS(on) =1.05 (typ) VGS =10V, ID =4.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s... See More ⇒

Detailed specifications: APQ07SN65AH , APQ07SN80BF , APQ07SN80BH , APQ08SN50B , APQ08SN50BE , APQ08SN50BF , APQ08SN50BH , APQ09SN50A , IRLB3034 , APQ09SN90AD , APQ0CSN60A , APQ0CSN60AJ , APQ0DSN60AJ , APQ10SN40A , APQ10SN40AF , APQ10SN40AH , APQ10SN60A .