APQ09SN90AD PDF and Equivalents Search

 

APQ09SN90AD Specs and Replacement

Type Designator: APQ09SN90AD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-247

APQ09SN90AD substitution

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APQ09SN90AD datasheet

 ..1. Size:417K  alpha pacific
 apq09sn90ad.pdf pdf_icon

APQ09SN90AD

DEVICE SPECIFICATION APQ09SN90AD 900V/9A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 850V / 9A effect transistors are produced using planar stripe, RDS(on) =1.05 (typ) VGS =10V, ID =4.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s... See More ⇒

 7.1. Size:477K  alpha pacific
 apq09sn50a apq09sn50af.pdf pdf_icon

APQ09SN90AD

DEVICE SPECIFICATION apQ09SN50A(F) 500V/9A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 500V / 9A RDS(on) =0.6 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =5.4A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

Detailed specifications: APQ07SN80BF, APQ07SN80BH, APQ08SN50B, APQ08SN50BE, APQ08SN50BF, APQ08SN50BH, APQ09SN50A, APQ09SN50AF, IRF9640, APQ0CSN60A, APQ0CSN60AJ, APQ0DSN60AJ, APQ10SN40A, APQ10SN40AF, APQ10SN40AH, APQ10SN60A, APQ10SN60AF

Keywords - APQ09SN90AD MOSFET specs

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