All MOSFET. APQ09SN90AD Datasheet

 

APQ09SN90AD Datasheet and Replacement


   Type Designator: APQ09SN90AD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-247
 

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APQ09SN90AD Datasheet (PDF)

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APQ09SN90AD

DEVICE SPECIFICATION APQ09SN90AD 900V/9A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 850V / 9A effect transistors are produced using planar stripe, RDS(on) =1.05(typ)VGS =10V, ID =4.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s

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 apq09sn50a apq09sn50af.pdf pdf_icon

APQ09SN90AD

DEVICE SPECIFICATION apQ09SN50A(F)500V/9A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 500V / 9ARDS(on) =0.6(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =5.4A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

Datasheet: APQ07SN80BF , APQ07SN80BH , APQ08SN50B , APQ08SN50BE , APQ08SN50BF , APQ08SN50BH , APQ09SN50A , APQ09SN50AF , AON7403 , APQ0CSN60A , APQ0CSN60AJ , APQ0DSN60AJ , APQ10SN40A , APQ10SN40AF , APQ10SN40AH , APQ10SN60A , APQ10SN60AF .

History: IRF644 | HBS170 | SE150180GTS | TMP6N70

Keywords - APQ09SN90AD MOSFET datasheet

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