APQ0CSN60A PDF and Equivalents Search

 

APQ0CSN60A Specs and Replacement

Type Designator: APQ0CSN60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: TO-220

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APQ0CSN60A datasheet

 ..1. Size:410K  alpha pacific
 apq0csn60a.pdf pdf_icon

APQ0CSN60A

DEVICE SPECIFICATION apQ0CSN60A 600V/0.35A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 0.35A effect transistors are produced using planar stripe, RDS(on) =14 (typ) VGS =10V, ID =0.21A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize ... See More ⇒

 0.1. Size:423K  alpha pacific
 apq0csn60aj.pdf pdf_icon

APQ0CSN60A

DEVICE SPECIFICATION apQ0CSN60AJ 600V/0.35A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 0.35A effect transistors are produced using planar stripe, RDS(on) =14 (typ) VGS =10V, ID =0.21A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize... See More ⇒

Detailed specifications: APQ07SN80BH, APQ08SN50B, APQ08SN50BE, APQ08SN50BF, APQ08SN50BH, APQ09SN50A, APQ09SN50AF, APQ09SN90AD, IRFB7545, APQ0CSN60AJ, APQ0DSN60AJ, APQ10SN40A, APQ10SN40AF, APQ10SN40AH, APQ10SN60A, APQ10SN60AF, APQ10SN60AH

Keywords - APQ0CSN60A MOSFET specs

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