All MOSFET. APQ0CSN60A Datasheet

 

APQ0CSN60A Datasheet and Replacement


   Type Designator: APQ0CSN60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.77 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
   Package: TO-220
 

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APQ0CSN60A Datasheet (PDF)

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APQ0CSN60A

DEVICE SPECIFICATION apQ0CSN60A600V/0.35A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 0.35A effect transistors are produced using planar stripe, RDS(on) =14(typ) VGS =10V, ID =0.21A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

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APQ0CSN60A

DEVICE SPECIFICATION apQ0CSN60AJ600V/0.35A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 0.35A effect transistors are produced using planar stripe, RDS(on) =14(typ) VGS =10V, ID =0.21A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF6797M

Keywords - APQ0CSN60A MOSFET datasheet

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