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APQ0DSN60AJ Specs and Replacement

Type Designator: APQ0DSN60AJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.9 Ohm

Package: TO-92

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APQ0DSN60AJ datasheet

 ..1. Size:523K  alpha pacific
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APQ0DSN60AJ

DEVICE SPECIFICATION APQ0DSN60AJ 600V/0.4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 0.4A effect transistors are produced using planar stripe, RDS(on) =8 (typ) VGS =10V, ID =0.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

Detailed specifications: APQ08SN50BE, APQ08SN50BF, APQ08SN50BH, APQ09SN50A, APQ09SN50AF, APQ09SN90AD, APQ0CSN60A, APQ0CSN60AJ, K2611, APQ10SN40A, APQ10SN40AF, APQ10SN40AH, APQ10SN60A, APQ10SN60AF, APQ10SN60AH, APQ10SN65AF, APQ10SN65AH

Keywords - APQ0DSN60AJ MOSFET specs

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