All MOSFET. IRFS730A Datasheet

 

IRFS730A Datasheet and Replacement


   Type Designator: IRFS730A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 32 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F
 

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IRFS730A Datasheet (PDF)

 ..1. Size:506K  samsung
 irfs730a.pdf pdf_icon

IRFS730A

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 7.1. Size:286K  1
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IRFS730A

 7.2. Size:309K  1
 irfs730 irfs731 irfs732 irfs733.pdf pdf_icon

IRFS730A

 7.3. Size:904K  fairchild semi
 irfs730b.pdf pdf_icon

IRFS730A

November 2001IRF730B/IRFS730B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

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Keywords - IRFS730A MOSFET datasheet

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