IRFS730A PDF and Equivalents Search

 

IRFS730A Specs and Replacement

Type Designator: IRFS730A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

IRFS730A substitution

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IRFS730A datasheet

 ..1. Size:506K  samsung
irfs730a.pdf pdf_icon

IRFS730A

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒

 7.1. Size:286K  1
irfs730 irfs731.pdf pdf_icon

IRFS730A

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 7.3. Size:904K  fairchild semi
irfs730b.pdf pdf_icon

IRFS730A

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Detailed specifications: IRFS654A , IRFS710A , IRFS720 , IRFS720A , IRFS721 , IRFS722 , IRFS723 , IRFS730 , IRF520 , IRFS731 , IRFS732 , IRFS733 , IRFS740 , IRFS740A , IRFS741 , IRFS742 , IRFS743 .

History: AON7450

Keywords - IRFS730A MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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