All MOSFET. APQ13SN50A Datasheet

 

APQ13SN50A Datasheet and Replacement


   Type Designator: APQ13SN50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 43 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220
 

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APQ13SN50A Datasheet (PDF)

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APQ13SN50A

DEVICE SPECIFICATION apQ13SN50A(F)500V/13A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 13A, RDS(on) =0.39(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =7.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

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APQ13SN50A

DEVICE SPECIFICATION APQ13SN50AH APQ13SN50AF 500V/13A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 13A effect transistors are produced using planar stripe, RDS(on) =0.39(typ) VGS =10V, ID =7.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: R6020KNX | FDPF17N60NT | STP22NM60N

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