APQ13SN50AH MOSFET Datasheet: N-Ch, 500V, 13A. Full specification with pinout and replacement list

APQ13SN50AH Specs and Replacement

Type Designator: APQ13SN50AH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 195 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 180 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO-220

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APQ13SN50AH datasheet

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DEVICE SPECIFICATION APQ13SN50AH APQ13SN50AF 500V/13A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 13A effect transistors are produced using planar stripe, RDS(on) =0.39 (typ) VGS =10V, ID =7.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored... See More ⇒

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apq13sn50a.pdf pdf_icon

DEVICE SPECIFICATION apQ13SN50A(F) 500V/13A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 13A, RDS(on) =0.39 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =7.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-... See More ⇒

Detailed specifications: APQ11BSN40A , APQ12SN60A , APQ12SN60AF , APQ12SN60AH , APQ12SN65AF , APQ12SN65AH , APQ13SN50A , APQ13SN50AF , IRF640 , APQ14SN65AF , APQ14SN65AH , APQ16SN06AA , APQ16SN06AB , APQ1HSN60AA , APQ1HSN60AB , APQ25SN06AA , APQ25SN06AB .