All MOSFET. APQ14SN65AH Datasheet

 

APQ14SN65AH Datasheet and Replacement


   Type Designator: APQ14SN65AH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29.6 nS
   Cossⓘ - Output Capacitance: 217 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220
 

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APQ14SN65AH Datasheet (PDF)

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APQ14SN65AH

DEVICE SPECIFICATION APQ14SN65AH APQ14SN65AF 650V/14A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 14A field effect transistors are produced using planar RDS(on) = 0.55(typ)VGS = 10 V ,ID =7A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

Datasheet: APQ12SN60AF , APQ12SN60AH , APQ12SN65AF , APQ12SN65AH , APQ13SN50A , APQ13SN50AF , APQ13SN50AH , APQ14SN65AF , IRFP260N , APQ16SN06AA , APQ16SN06AB , APQ1HSN60AA , APQ1HSN60AB , APQ25SN06AA , APQ25SN06AB , APQ39SN04AA , APQ39SN04AB .

History: IRFI9Z24GPBF | NTGS3443 | MDP6N60TH | IRHNM57214SE | JCS5N60FB | FQB5N30TM

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