APQ16SN06AB PDF and Equivalents Search

 

APQ16SN06AB Specs and Replacement

Type Designator: APQ16SN06AB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: TO-252

APQ16SN06AB substitution

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APQ16SN06AB datasheet

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 apq16sn06aa apq16sn06ab.pdf pdf_icon

APQ16SN06AB

DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 16A effect transistors are produced using planar stripe, RDS(on) =52m (typ) VGS =10V, ID =15A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

Detailed specifications: APQ12SN65AF , APQ12SN65AH , APQ13SN50A , APQ13SN50AF , APQ13SN50AH , APQ14SN65AF , APQ14SN65AH , APQ16SN06AA , IRF640N , APQ1HSN60AA , APQ1HSN60AB , APQ25SN06AA , APQ25SN06AB , APQ39SN04AA , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB .

History: FCPF36N60N | WMM10N105C2 | BR80N75

Keywords - APQ16SN06AB MOSFET specs

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