All MOSFET. APQ16SN06AB Datasheet

 

APQ16SN06AB Datasheet and Replacement


   Type Designator: APQ16SN06AB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: TO-252
 

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APQ16SN06AB Datasheet (PDF)

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APQ16SN06AB

DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 16A effect transistors are produced using planar stripe, RDS(on) =52m(typ) VGS =10V, ID =15A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

Datasheet: APQ12SN65AF , APQ12SN65AH , APQ13SN50A , APQ13SN50AF , APQ13SN50AH , APQ14SN65AF , APQ14SN65AH , APQ16SN06AA , IRF630 , APQ1HSN60AA , APQ1HSN60AB , APQ25SN06AA , APQ25SN06AB , APQ39SN04AA , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB .

History: IRF7220

Keywords - APQ16SN06AB MOSFET datasheet

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