All MOSFET. APQ16SN06AB Datasheet

 

APQ16SN06AB Datasheet and Replacement


   Type Designator: APQ16SN06AB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: TO-252
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APQ16SN06AB Datasheet (PDF)

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APQ16SN06AB

DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 16A effect transistors are produced using planar stripe, RDS(on) =52m(typ) VGS =10V, ID =15A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTP6N50D2 | DMNH10H028SCT | IRLS4030 | MDS1528URH | IPP040N06N3G | SFB068N90C3 | WML11N80M3

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