All MOSFET. APQ1HSN60AA Datasheet

 

APQ1HSN60AA Datasheet and Replacement


   Type Designator: APQ1HSN60AA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO-251
      - MOSFET Cross-Reference Search

 

APQ1HSN60AA Datasheet (PDF)

 ..1. Size:438K  alpha pacific
 apq1hsn60aa.pdf pdf_icon

APQ1HSN60AA

DEVICE SPECIFICATION apQ1HSN60AA600V/1.8A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 1.8A effect transistors are produced using planar stripe, RDS(on) =4.6(typ) VGS =10V, ID =1.08A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

 4.1. Size:440K  alpha pacific
 apq1hsn60ab.pdf pdf_icon

APQ1HSN60AA

DEVICE SPECIFICATION apQ1HSN60AB600V/1.8A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 1.8A effect transistors are produced using planar stripe, RDS(on) =4.6(typ) VGS =10V, ID =1.08A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

Datasheet: APQ12SN65AH , APQ13SN50A , APQ13SN50AF , APQ13SN50AH , APQ14SN65AF , APQ14SN65AH , APQ16SN06AA , APQ16SN06AB , IRF3710 , APQ1HSN60AB , APQ25SN06AA , APQ25SN06AB , APQ39SN04AA , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE .

History: SFP080N150C2 | LNC07R085H | P2806BD | FCPF165N65S3R0L | SFG60N12PF | NVF3055L108 | IRF3205L

Keywords - APQ1HSN60AA MOSFET datasheet

 APQ1HSN60AA cross reference
 APQ1HSN60AA equivalent finder
 APQ1HSN60AA lookup
 APQ1HSN60AA substitution
 APQ1HSN60AA replacement

 

 
Back to Top

 


 
.