APQ1HSN60AB PDF and Equivalents Search

 

APQ1HSN60AB Specs and Replacement

Type Designator: APQ1HSN60AB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO-252

APQ1HSN60AB substitution

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APQ1HSN60AB datasheet

 ..1. Size:440K  alpha pacific
 apq1hsn60ab.pdf pdf_icon

APQ1HSN60AB

DEVICE SPECIFICATION apQ1HSN60AB 600V/1.8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 1.8A effect transistors are produced using planar stripe, RDS(on) =4.6 (typ) VGS =10V, ID =1.08A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize ... See More ⇒

 4.1. Size:438K  alpha pacific
 apq1hsn60aa.pdf pdf_icon

APQ1HSN60AB

DEVICE SPECIFICATION apQ1HSN60AA 600V/1.8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 1.8A effect transistors are produced using planar stripe, RDS(on) =4.6 (typ) VGS =10V, ID =1.08A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize ... See More ⇒

Detailed specifications: APQ13SN50A , APQ13SN50AF , APQ13SN50AH , APQ14SN65AF , APQ14SN65AH , APQ16SN06AA , APQ16SN06AB , APQ1HSN60AA , AO3400 , APQ25SN06AA , APQ25SN06AB , APQ39SN04AA , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF .

History: CS2N60 | G2002 | IRLR7821C | APQ39SN04AB | WMP10N105C2

Keywords - APQ1HSN60AB MOSFET specs

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