APQ25SN06AB MOSFET Datasheet: N-Ch, 60V, 25A. Full specification with pinout and replacement list

APQ25SN06AB Specs and Replacement

Type Designator: APQ25SN06AB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 98 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-252

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APQ25SN06AB datasheet

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DEVICE SPECIFICATION APQ25SN06AA APQ25SN06AB 60V/25A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 25A effect transistors are produced using planar stripe, RDS(on) =27m (typ) VGS =10V, ID =20A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

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Detailed specifications: APQ13SN50AH , APQ14SN65AF , APQ14SN65AH , APQ16SN06AA , APQ16SN06AB , APQ1HSN60AA , APQ1HSN60AB , APQ25SN06AA , IRF3710 , APQ39SN04AA , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF .

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