APQ39SN04AB PDF and Equivalents Search

 

APQ39SN04AB Specs and Replacement

Type Designator: APQ39SN04AB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-252

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APQ39SN04AB datasheet

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 apq39sn04aa apq39sn04ab.pdf pdf_icon

APQ39SN04AB

DEVICE SPECIFICATION APQ39SN04AA APQ39SN04AB 40V/39A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 40V / 39A effect transistors are produced using planar stripe, RDS(on) =9m (typ) VGS =10V, ID =15A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m... See More ⇒

Detailed specifications: APQ14SN65AH , APQ16SN06AA , APQ16SN06AB , APQ1HSN60AA , APQ1HSN60AB , APQ25SN06AA , APQ25SN06AB , APQ39SN04AA , AON6414A , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A .

History: CS2N60 | WMP10N105C2 | IRLR7821C

Keywords - APQ39SN04AB MOSFET specs

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