All MOSFET. APQ57SN10B Datasheet

 

APQ57SN10B Datasheet and Replacement


   Type Designator: APQ57SN10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 162 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 473 nS
   Cossⓘ - Output Capacitance: 717 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-220
 

 APQ57SN10B substitution

   - MOSFET ⓘ Cross-Reference Search

 

APQ57SN10B Datasheet (PDF)

 ..1. Size:389K  alpha pacific
 apq57sn10b.pdf pdf_icon

APQ57SN10B

DEVICE SPECIFICATION apQ57SN10B100V/57A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 100V / 57A, RDS(on) =18m(max) @ effect transistors are produced using planar stripe, VGS =10V, ID =35A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

 0.1. Size:506K  alpha pacific
 apq57sn10bh.pdf pdf_icon

APQ57SN10B

DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 100V / 57A effect transistors are produced using planar stripe, RDS(on) =18m(max) VGS =10V, ID =28.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

Datasheet: APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , APQ50SN06AH , SKD502T , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , APQ65SN06AH , APQ84SN06A .

Keywords - APQ57SN10B MOSFET datasheet

 APQ57SN10B cross reference
 APQ57SN10B equivalent finder
 APQ57SN10B lookup
 APQ57SN10B substitution
 APQ57SN10B replacement

 

 
Back to Top

 


 
.