APQ57SN10B PDF and Equivalents Search

 

APQ57SN10B Specs and Replacement

Type Designator: APQ57SN10B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 162 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 473 nS

Cossⓘ - Output Capacitance: 717 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-220

APQ57SN10B substitution

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APQ57SN10B datasheet

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APQ57SN10B

DEVICE SPECIFICATION apQ57SN10B 100V/57A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 100V / 57A, RDS(on) =18m (max) @ effect transistors are produced using planar stripe, VGS =10V, ID =35A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

 0.1. Size:506K  alpha pacific
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APQ57SN10B

DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 100V / 57A effect transistors are produced using planar stripe, RDS(on) =18m (max) VGS =10V, ID =28.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o... See More ⇒

Detailed specifications: APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , APQ50SN06AH , STP75NF75 , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , APQ65SN06AH , APQ84SN06A .

History: GSM2304AS | IRLS3034-7P

Keywords - APQ57SN10B MOSFET specs

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