All MOSFET. APQ57SN10B Datasheet

 

APQ57SN10B MOSFET. Datasheet pdf. Equivalent

Type Designator: APQ57SN10B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 162 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 57 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 473 nS

Drain-Source Capacitance (Cd): 717 pF

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: TO-220

APQ57SN10B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APQ57SN10B Datasheet (PDF)

1.1. apq57sn10bh.pdf Size:506K _upd-mosfet

APQ57SN10B
APQ57SN10B

DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field • 100V / 57A effect transistors are produced using planar stripe, • RDS(on) =18mΩ(max), VGS =10V, ID =28.5A DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored to minimize o

1.2. apq57sn10b.pdf Size:389K _upd-mosfet

APQ57SN10B
APQ57SN10B

DEVICE SPECIFICATION apQ57SN10B 100V/57A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field • 100V / 57A, RDS(on) =18mΩ(max) @ effect transistors are produced using planar stripe, • VGS =10V, ID =35A DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored to minimize on-sta

 

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