APQ57SN10B Datasheet and Replacement
Type Designator: APQ57SN10B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 162 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 473 nS
Cossⓘ - Output Capacitance: 717 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO-220
APQ57SN10B substitution
APQ57SN10B Datasheet (PDF)
apq57sn10b.pdf

DEVICE SPECIFICATION apQ57SN10B100V/57A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 100V / 57A, RDS(on) =18m(max) @ effect transistors are produced using planar stripe, VGS =10V, ID =35A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta
apq57sn10bh.pdf

DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 100V / 57A effect transistors are produced using planar stripe, RDS(on) =18m(max) VGS =10V, ID =28.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o
Datasheet: APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , APQ50SN06AH , 12N60 , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , APQ65SN06AH , APQ84SN06A .
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