APQ57SN10B MOSFET. Datasheet pdf. Equivalent
Type Designator: APQ57SN10B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 162 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 57 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 473 nS
Drain-Source Capacitance (Cd): 717 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: TO-220
APQ57SN10B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APQ57SN10B Datasheet (PDF)
1.1. apq57sn10bh.pdf 
Size:506K _upd-mosfet
DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field • 100V / 57A effect transistors are produced using planar stripe, • RDS(on) =18mΩ(max)， VGS =10V, ID =28.5A DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored to minimize o
1.2. apq57sn10b.pdf Size:389K _upd-mosfet
DEVICE SPECIFICATION apQ57SN10B 100V/57A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field • 100V / 57A, RDS(on) =18mΩ(max) @ effect transistors are produced using planar stripe, • VGS =10V, ID =35A DMOS technology. • Fast switching This advanced technology has been especially • 100% avalanche tested tailored to minimize on-sta
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
