APQ57SN10BH Specs and Replacement
Type Designator: APQ57SN10BH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 162 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 473 nS
Cossⓘ - Output Capacitance: 717 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO-220
APQ57SN10BH substitution
- MOSFET ⓘ Cross-Reference Search
APQ57SN10BH datasheet
apq57sn10bh.pdf
DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 100V / 57A effect transistors are produced using planar stripe, RDS(on) =18m (max) VGS =10V, ID =28.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o... See More ⇒
apq57sn10b.pdf
DEVICE SPECIFICATION apQ57SN10B 100V/57A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 100V / 57A, RDS(on) =18m (max) @ effect transistors are produced using planar stripe, VGS =10V, ID =35A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒
Detailed specifications: APQ4ESN50AF, APQ4ESN50AH, APQ4ESN65AF, APQ4ESN65AH, APQ50SN06A, APQ50SN06AD, APQ50SN06AH, APQ57SN10B, 2N7002, APQ5ESN40A, APQ5ESN40AF, APQ5ESN40AH, APQ65SN06A, APQ65SN06AD, APQ65SN06AH, APQ84SN06A, APQ84SN06AD
Keywords - APQ57SN10BH MOSFET specs
APQ57SN10BH cross reference
APQ57SN10BH equivalent finder
APQ57SN10BH pdf lookup
APQ57SN10BH substitution
APQ57SN10BH replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
