All MOSFET. APQ57SN10BH Datasheet

 

APQ57SN10BH Datasheet and Replacement


   Type Designator: APQ57SN10BH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 162 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 473 nS
   Cossⓘ - Output Capacitance: 717 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-220
 

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APQ57SN10BH Datasheet (PDF)

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APQ57SN10BH

DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 100V / 57A effect transistors are produced using planar stripe, RDS(on) =18m(max) VGS =10V, ID =28.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

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APQ57SN10BH

DEVICE SPECIFICATION apQ57SN10B100V/57A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 100V / 57A, RDS(on) =18m(max) @ effect transistors are produced using planar stripe, VGS =10V, ID =35A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

Datasheet: APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , APQ50SN06AH , APQ57SN10B , 2N7002 , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , APQ65SN06AH , APQ84SN06A , APQ84SN06AD .

History: APQ5ESN40AF | NCE60ND08S | HY8N70T | HY8N50T | GP1M010A080N

Keywords - APQ57SN10BH MOSFET datasheet

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