All MOSFET. APQ9ESN20AB Datasheet

 

APQ9ESN20AB Datasheet and Replacement


   Type Designator: APQ9ESN20AB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-252
 

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APQ9ESN20AB Datasheet (PDF)

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APQ9ESN20AB

DEVICE SPECIFICATION apQ9ESN20AB 200V/9.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 200V / 9.5A effect transistors are produced using planar stripe, RDS(on) =0.34(typ) VGS =10V, ID =4.75A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

Datasheet: APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , APQ65SN06AH , APQ84SN06A , APQ84SN06AD , APQ84SN06AH , IRFB3607 , CEB05N8 , CEB110P03 , CEB18N5 , CEB30N3 , CED05N8 , CED5175 , CED6042 , CEDM7001 .

History: SUD19N20-90 | STU12N60M2 | HCP90R800 | 2N65L-TMA-T | CHM6561QGP | SVF12N60STR | NTMFS5C450NL

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