APQ9ESN20AB Specs and Replacement
Type Designator: APQ9ESN20AB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-252
APQ9ESN20AB substitution
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APQ9ESN20AB datasheet
apq9esn20ab.pdf
DEVICE SPECIFICATION apQ9ESN20AB 200V/9.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 200V / 9.5A effect transistors are produced using planar stripe, RDS(on) =0.34 (typ) VGS =10V, ID =4.75A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o... See More ⇒
Detailed specifications: APQ5ESN40AF, APQ5ESN40AH, APQ65SN06A, APQ65SN06AD, APQ65SN06AH, APQ84SN06A, APQ84SN06AD, APQ84SN06AH, K4145, CEB05N8, CEB110P03, CEB18N5, CEB30N3, CED05N8, CED5175, CED6042, CEDM7001
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