CEB18N5 Specs and Replacement
Type Designator: CEB18N5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 305 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO-263
CEB18N5 substitution
- MOSFET ⓘ Cross-Reference Search
CEB18N5 datasheet
ceb18n5 cep18n5.pdf
CEP18N5/CEB18N5 CEF18N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP18N5 500V 0.27 18A 10V CEB18N5 500V 0.27 18A 10V CEF18N5 500V 0.27 18A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
Detailed specifications: APQ65SN06AD, APQ65SN06AH, APQ84SN06A, APQ84SN06AD, APQ84SN06AH, APQ9ESN20AB, CEB05N8, CEB110P03, 12N60, CEB30N3, CED05N8, CED5175, CED6042, CEDM7001, CEDM7001E, CEDM7001VL, CEDM7002AE
Keywords - CEB18N5 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
