All MOSFET. CEB18N5 Datasheet

 

CEB18N5 Datasheet and Replacement


   Type Designator: CEB18N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO-263
 

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CEB18N5 Datasheet (PDF)

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CEB18N5

CEP18N5/CEB18N5CEF18N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP18N5 500V 0.27 18A 10VCEB18N5 500V 0.27 18A 10VCEF18N5 500V 0.27 18A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SER

Datasheet: APQ65SN06AD , APQ65SN06AH , APQ84SN06A , APQ84SN06AD , APQ84SN06AH , APQ9ESN20AB , CEB05N8 , CEB110P03 , 4N60 , CEB30N3 , CED05N8 , CED5175 , CED6042 , CEDM7001 , CEDM7001E , CEDM7001VL , CEDM7002AE .

History: HM2318B | INJ0303AC1

Keywords - CEB18N5 MOSFET datasheet

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