All MOSFET. CEEF02N65G Datasheet

 

CEEF02N65G Datasheet and Replacement


   Type Designator: CEEF02N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-126F
 

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CEEF02N65G Datasheet (PDF)

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CEEF02N65G

CEEF02N65GN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 2.0A, RDS(ON) = 5.0 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-126F package.GGDSCEE SERIESTO-126FSABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit Unit

Datasheet: CEDM7001VL , CEDM7002AE , CEDM7004 , CEDM7004VL , CEDM8001 , CEDM8001VL , CEDM8004 , CEDM8004VL , STF13NM60N , CEF05N8 , CEF18N5 , CEF30N3 , CEM101 , CEM2133 , CEM4248 , CEP05N8 , CEP110P03 .

History: CJQ4410

Keywords - CEEF02N65G MOSFET datasheet

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