All MOSFET. CEEF02N65G Datasheet

 

CEEF02N65G MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEEF02N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.7 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-126F

 CEEF02N65G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEEF02N65G Datasheet (PDF)

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 ceef02n65g.pdf

CEEF02N65G CEEF02N65G

CEEF02N65GN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 2.0A, RDS(ON) = 5.0 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-126F package.GGDSCEE SERIESTO-126FSABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit Unit

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 3SK70

 

 
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