CEEF02N65G Specs and Replacement
Type Designator: CEEF02N65G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-126F
CEEF02N65G substitution
- MOSFET ⓘ Cross-Reference Search
CEEF02N65G datasheet
ceef02n65g.pdf
CEEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 2.0A, RDS(ON) = 5.0 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-126F package. G G D S CEE SERIES TO-126F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Unit... See More ⇒
Detailed specifications: CEDM7001VL, CEDM7002AE, CEDM7004, CEDM7004VL, CEDM8001, CEDM8001VL, CEDM8004, CEDM8004VL, IRFP250, CEF05N8, CEF18N5, CEF30N3, CEM101, CEM2133, CEM4248, CEP05N8, CEP110P03
Keywords - CEEF02N65G MOSFET specs
CEEF02N65G cross reference
CEEF02N65G equivalent finder
CEEF02N65G pdf lookup
CEEF02N65G substitution
CEEF02N65G replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
