All MOSFET. CEF18N5 Datasheet

 

CEF18N5 Datasheet and Replacement


   Type Designator: CEF18N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 51 nC
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO-220F
 

 CEF18N5 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEF18N5 Datasheet (PDF)

 ..1. Size:379K  cet
 cef18n5.pdf pdf_icon

CEF18N5

CEP18N5/CEB18N5CEF18N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP18N5 500V 0.27 18A 10VCEB18N5 500V 0.27 18A 10VCEF18N5 500V 0.27 18A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SER

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - CEF18N5 MOSFET datasheet

 CEF18N5 cross reference
 CEF18N5 equivalent finder
 CEF18N5 lookup
 CEF18N5 substitution
 CEF18N5 replacement

 

 
Back to Top

 


 
.