CEF18N5 Specs and Replacement
Type Designator: CEF18N5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 305 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO-220F
CEF18N5 substitution
- MOSFET ⓘ Cross-Reference Search
CEF18N5 datasheet
cef18n5.pdf
CEP18N5/CEB18N5 CEF18N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP18N5 500V 0.27 18A 10V CEB18N5 500V 0.27 18A 10V CEF18N5 500V 0.27 18A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
Detailed specifications: CEDM7004, CEDM7004VL, CEDM8001, CEDM8001VL, CEDM8004, CEDM8004VL, CEEF02N65G, CEF05N8, 2SK3568, CEF30N3, CEM101, CEM2133, CEM4248, CEP05N8, CEP110P03, CEP18N5, CEP30N3
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