All MOSFET. CEF18N5 Datasheet

 

CEF18N5 Datasheet and Replacement


   Type Designator: CEF18N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO-220F
 

 CEF18N5 substitution

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CEF18N5 Datasheet (PDF)

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CEF18N5

CEP18N5/CEB18N5CEF18N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP18N5 500V 0.27 18A 10VCEB18N5 500V 0.27 18A 10VCEF18N5 500V 0.27 18A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SER

Datasheet: CEDM7004 , CEDM7004VL , CEDM8001 , CEDM8001VL , CEDM8004 , CEDM8004VL , CEEF02N65G , CEF05N8 , 5N65 , CEF30N3 , CEM101 , CEM2133 , CEM4248 , CEP05N8 , CEP110P03 , CEP18N5 , CEP30N3 .

History: IPD530N15N3G

Keywords - CEF18N5 MOSFET datasheet

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