All MOSFET. CEF30N3 Datasheet

 

CEF30N3 Datasheet and Replacement


   Type Designator: CEF30N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO-220F
 

 CEF30N3 substitution

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CEF30N3 Datasheet (PDF)

 ..1. Size:362K  cet
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CEF30N3

CEP30N3/CEB30N3CEF30N3N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP30N3 300V 110m 30A 10VCEB30N3 300V 110m 30A 10VCEF30N3 300V 110m 30A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIES CEP SERIES CEF SERI

Datasheet: CEDM7004VL , CEDM8001 , CEDM8001VL , CEDM8004 , CEDM8004VL , CEEF02N65G , CEF05N8 , CEF18N5 , STP80NF70 , CEM101 , CEM2133 , CEM4248 , CEP05N8 , CEP110P03 , CEP18N5 , CEP30N3 , CEU5175 .

History: BUZ73AL | TK12A55D | MP4N150 | SSM3K329R | PMPB12UNEA | SL21N65CF

Keywords - CEF30N3 MOSFET datasheet

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