CEF30N3 Specs and Replacement
Type Designator: CEF30N3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 390 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-220F
CEF30N3 substitution
- MOSFET ⓘ Cross-Reference Search
CEF30N3 datasheet
ceb30n3 cef30n3 cep30n3.pdf
CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP30N3 300V 110m 30A 10V CEB30N3 300V 110m 30A 10V CEF30N3 300V 110m 30A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERI... See More ⇒
Detailed specifications: CEDM7004VL, CEDM8001, CEDM8001VL, CEDM8004, CEDM8004VL, CEEF02N65G, CEF05N8, CEF18N5, 10N65, CEM101, CEM2133, CEM4248, CEP05N8, CEP110P03, CEP18N5, CEP30N3, CEU5175
Keywords - CEF30N3 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
